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A DVANCED
L INEAR
D EVICES, I NC.
ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
APPLICATIONS
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1106/ALD1116
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Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
PIN CONFIGURATION
ALD1116
FEATURES
? Low threshold voltage of 0.7V
? Low input capacitance
? Low Vos 2mV typical
DN1
GN1
SN1
1
2
3
8
7
6
DN2
GN2
SN2
? High input impedance -- 10 14 ? typical
? Negative current (I DS ) temperature coefficient
? Enhancement-mode (normally off)
? DC current gain 10 9
? Low input and output leakage currents
V -
4
TOP VIEW
SAL, PAL, DA PACKAGES
5
V +
? RoHS compliant
ALD1106
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
DN1
1
14
DN2
0 ° C to +70 ° C
Operating Temperature Range*
0 ° C to +70 ° C -55 ° C to +125 ° C
GN1
SN1
2
3
13
12
GN2
SN2
8-Pin SOIC
8-Pin Plastic Dip
8-Pin CERDIP
Package
ALD1116SAL
14-Pin SOIC
Package
Package
ALD1116PAL
14-Pin Plastic Dip
Package
Package
ALD1116DA
14-Pin CERDIP
Package
V -
DN4
GN4
SN4
4
5
6
7
11
10
9
8
V +
DN3
GN3
SN3
ALD1106SBL
ALD1106PBL
ALD1106DB
TOP VIEW
SBL, PBL, DB PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
ALD1106
V+ (11)
BLOCK DIAGRAM
ALD1116
V+ (5)
D N1 (1)
D N2 (14)
~
D N3 (10)
D N4 (5)
D N1 (1)
~
D N2 (8)
G N1 (2)
G N2 (13) G N3 (9)
G N4 (6)
G N1 (2)
G N2 (7)
S N1 (3)
V- (4)
S N2 (12)
S N3 (8)
V- (4)
S N4 (7)
S N1 (3)
V- (4)
S N2 (6)
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数
ALD1117 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1117DA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1117PA 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117PAL 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117SA 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117SAL 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD111910MAL 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD111910PAL 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube